<?xml version="1.0" encoding="utf-8" standalone="no"?>
<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Cho,&#x20;Kyungjune</dcvalue>
<dcvalue element="contributor" qualifier="author">Pak,&#x20;Jinsu</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Jae-Keun</dcvalue>
<dcvalue element="contributor" qualifier="author">Kang,&#x20;Keehoon</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Tae-Young</dcvalue>
<dcvalue element="contributor" qualifier="author">Shin,&#x20;Jiwon</dcvalue>
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Barbara&#x20;Yuri</dcvalue>
<dcvalue element="contributor" qualifier="author">Chung,&#x20;Seungjun</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Takhee</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T22:34:39Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T22:34:39Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-03</dcvalue>
<dcvalue element="date" qualifier="issued">2018-05-03</dcvalue>
<dcvalue element="identifier" qualifier="issn">0935-9648</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;121384</dcvalue>
<dcvalue element="description" qualifier="abstract">Although&#x20;2D&#x20;molybdenum&#x20;disulfide&#x20;(MoS2)&#x20;has&#x20;gained&#x20;much&#x20;attention&#x20;due&#x20;to&#x20;its&#x20;unique&#x20;electrical&#x20;and&#x20;optical&#x20;properties,&#x20;the&#x20;limited&#x20;electrical&#x20;contact&#x20;to&#x20;2D&#x20;semiconductors&#x20;still&#x20;impedes&#x20;the&#x20;realization&#x20;of&#x20;high-performance&#x20;2D&#x20;MoS2-based&#x20;devices.&#x20;In&#x20;this&#x20;regard,&#x20;many&#x20;studies&#x20;have&#x20;been&#x20;conducted&#x20;to&#x20;improve&#x20;the&#x20;carrier-injection&#x20;properties&#x20;by&#x20;inserting&#x20;functional&#x20;paths,&#x20;such&#x20;as&#x20;graphene&#x20;or&#x20;hexagonal&#x20;boron&#x20;nitride,&#x20;between&#x20;the&#x20;electrodes&#x20;and&#x20;2D&#x20;semiconductors.&#x20;The&#x20;reported&#x20;strategies,&#x20;however,&#x20;require&#x20;relatively&#x20;time-consuming&#x20;and&#x20;low-yield&#x20;transfer&#x20;processes&#x20;on&#x20;sub-micrometer&#x20;MoS2&#x20;flakes.&#x20;Here,&#x20;a&#x20;simple&#x20;contact-engineering&#x20;method&#x20;is&#x20;suggested,&#x20;introducing&#x20;chemically&#x20;adsorbed&#x20;thiol-molecules&#x20;as&#x20;thin&#x20;tunneling&#x20;barriers&#x20;between&#x20;the&#x20;metal&#x20;electrodes&#x20;and&#x20;MoS2&#x20;channels.&#x20;The&#x20;selectively&#x20;deposited&#x20;thiol-molecules&#x20;via&#x20;the&#x20;vapor-deposition&#x20;process&#x20;provide&#x20;additional&#x20;tunneling&#x20;paths&#x20;at&#x20;the&#x20;contact&#x20;regions,&#x20;improving&#x20;the&#x20;carrier-injection&#x20;properties&#x20;with&#x20;lower&#x20;activation&#x20;energies&#x20;in&#x20;MoS2&#x20;field-effect&#x20;transistors.&#x20;Additionally,&#x20;by&#x20;inserting&#x20;thiol-molecules&#x20;at&#x20;the&#x20;only&#x20;one&#x20;contact&#x20;region,&#x20;asymmetric&#x20;carrier-injection&#x20;is&#x20;feasible&#x20;depending&#x20;on&#x20;the&#x20;temperature&#x20;and&#x20;gate&#x20;bias.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">WILEY-V&#x20;C&#x20;H&#x20;VERLAG&#x20;GMBH</dcvalue>
<dcvalue element="subject" qualifier="none">MONOLAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="none">SULFUR&#x20;VACANCIES</dcvalue>
<dcvalue element="subject" qualifier="none">LAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="none">MOS2(0001)</dcvalue>
<dcvalue element="subject" qualifier="none">ADSORPTION</dcvalue>
<dcvalue element="subject" qualifier="none">BN</dcvalue>
<dcvalue element="title" qualifier="none">Contact-Engineered&#x20;Electrical&#x20;Properties&#x20;of&#x20;MoS2&#x20;Field-Effect&#x20;Transistors&#x20;via&#x20;Selectively&#x20;Deposited&#x20;Thiol-Molecules</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1002&#x2F;adma.201705540</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">ADVANCED&#x20;MATERIALS,&#x20;v.30,&#x20;no.18</dcvalue>
<dcvalue element="citation" qualifier="title">ADVANCED&#x20;MATERIALS</dcvalue>
<dcvalue element="citation" qualifier="volume">30</dcvalue>
<dcvalue element="citation" qualifier="number">18</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000431615100004</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85044294710</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Chemistry,&#x20;Physical</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Nanoscience&#x20;&amp;&#x20;Nanotechnology</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Condensed&#x20;Matter</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Chemistry</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Science&#x20;&amp;&#x20;Technology&#x20;-&#x20;Other&#x20;Topics</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MONOLAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SULFUR&#x20;VACANCIES</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">LAYER&#x20;MOS2</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MOS2(0001)</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">ADSORPTION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">BN</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">charge&#x20;injection</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">contact&#x20;engineering</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">electrical&#x20;transport</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">MoS2</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">thiol-molecules</dcvalue>
</dublin_core>
