Cristoloveanu, S. Lee, K. H. Parihar, M. S. El Dirani, H. Lacord, J. Martinie, S. Le Royer, C. Barbe, J. -Ch. Mescot, X. Fonteneau, P. Galy, Ph. Gamiz, F. Navarro, C. Cheng, B. Duan, M. Adamu-Lema, F. Asenov, A. Taur, Y. Xu, Y. Kim, Y-T. Wan, J. Bawedin, M. 2024-01-19T23:00:27Z 2024-01-19T23:00:27Z 2021-09-03 2018-05 0038-1101 https://pubs.kist.re.kr/handle/201004/121409 The band-modulation and sharp-switching mechanisms in Z(2)-FET device operated as a capacitorless 1T-DRAM memory are reviewed. The main parameters that govern the memory performance are discussed based on detailed experiments and simulations. This 1T-DRAM memory does not suffer from super-coupling effect and can be integrated in sub-10 nm thick SOI films. It offers low leakage current, high current margin, long retention, low operating voltage especially for programming, and high speed. The Z(2)-FET is suitable for embedded memory applications. English PERGAMON-ELSEVIER SCIENCE LTD CAPACITORLESS 1T-DRAM BAND-MODULATION CELL TECHNOLOGY DEVICE NODE DRAM A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters Article 10.1016/j.sse.2017.11.012 1 SOLID-STATE ELECTRONICS, v.143, pp.10 - 19 SOLID-STATE ELECTRONICS 143 10 19 scie scopus 000430550600003 2-s2.0-85044381669 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article; Proceedings Paper CAPACITORLESS 1T-DRAM BAND-MODULATION CELL TECHNOLOGY DEVICE NODE DRAM 1T DRAM Zero subthreshold slope Z2FET 10nm SOI film Low power high current margin