Lee, Sojeong Kim, Taegyun Jang, Bongho Lee, Won-Yong Song, Kyu Chan Kim, Hyun Seo Do, Gyung Yeop Hwang, Seung Bum Chung, Seungjun Jang, Jaewon 2024-01-19T23:00:53Z 2024-01-19T23:00:53Z 2021-09-03 2018-05 0741-3106 https://pubs.kist.re.kr/handle/201004/121434 Asol-gel-processed ZrO2 layerwas used as an active layer for a resistive random-accessmemory (RRAM). With top Ag electrodes, the fabricated devices show convention albipolar switching memory properties. The impacts of device size and ZrO2 film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO2 film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO2/Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 10(4) s without any significant degradation. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC RESISTANCE TRANSISTORS Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO2 RRAM Article 10.1109/LED.2018.2820141 1 IEEE ELECTRON DEVICE LETTERS, v.39, no.5, pp.668 - 671 IEEE ELECTRON DEVICE LETTERS 39 5 668 671 scie scopus 000432990700006 2-s2.0-85044790595 Engineering, Electrical & Electronic Engineering Article RESISTANCE TRANSISTORS Sol-gel ZrO2 resistive random access memory electrochemicalmetallization cells