Kim, Seong Kwang Shim, Jae-Phil Geum, Dae-Myeong Kim, Jaewon Kim, Chang Zoo Kim, Han-Sung Song, Jin Dong Choi, Sung-Jin Kim, Dae Hwan Choi, Won Jun Kim, Hyung-Jun Kim, Dong Myong Kim, Sanghyeon 2024-01-19T23:00:56Z 2024-01-19T23:00:56Z 2021-09-03 2018-05 0018-9383 https://pubs.kist.re.kr/handle/201004/121436 In this paper, we fabricated In0.53Ga0.47As-on insulator (OI) MOSFETs on Si substrates with different doping types to mimic ground plane doping using direct wafer bonding and epitaxial lift-off (ELO) techniques. We investigated the impact of doping types on the ground plane and the backgate biasing, which are important and preferable components in monolithic 3-D (M3D) integration, on the electrical properties of MOSFETs, such as the threshold voltage (V-T) and the effective mobility (mu(eff)). It was found that V-T and mu(eff) were significantly modulated by the back-substrate doping and the back-biasing. These observations were explained by the change of carrier distributions, which were confirmed by technology computer-aided design simulation. Furthermore, we investigated the reusability of InP donor substrates for sequential epitaxial growth after ELO process toward a cost-effective M3D integration with the In0.53Ga0.47As channel. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC FIELD-EFFECT TRANSISTORS MOBILITY SI Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel Article 10.1109/TED.2018.2810304 1 IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.5, pp.1862 - 1868 IEEE TRANSACTIONS ON ELECTRON DEVICES 65 5 1862 1868 scie scopus 000430698900031 2-s2.0-85044868508 Engineering, Electrical & Electronic Physics, Applied Engineering Physics Article FIELD-EFFECT TRANSISTORS MOBILITY SI III-V compound semiconductor epitaxial lift-off (ELO) InGaAs InGaAs-OI monolithic 3-D (M3D) MOSFETs wafer bonding wafer reuse