Kim, Seong Keun Popovici, Mihaela 2024-01-19T23:01:05Z 2024-01-19T23:01:05Z 2021-09-03 2018-05 0883-7694 https://pubs.kist.re.kr/handle/201004/121445 Dynamic random-access memory (DRAM) is the main memory in most current computers. The excellent scalability of DRAM has significantly contributed to the development of modern computers. However, DRAM technology now faces critical challenges associated with further scaling toward the similar to 10-nm technology node. This scaling will likely end soon because of the inherent limitations of charge-based memory. Much effort has been dedicated to delaying this. Novel cell architectures have been designed to reduce the cell area, and new materials and process technologies have been extensively investigated, especially for dielectrics and electrodes related to charge storage. In this article, the current issues, recent progress in and the future of DRAM materials, and fabrication technologies are discussed. English CAMBRIDGE UNIV PRESS ATOMIC LAYER DEPOSITION SRTIO3 THIN-FILMS EQUIVALENT OXIDE THICKNESS INITIAL GROWTH-BEHAVIOR DOPED TIO2 FILMS ELECTRICAL-PROPERTIES DIELECTRIC-CONSTANT RU ELECTRODE NM PLASMA Future of dynamic random-access memory as main memory Article 10.1557/mrs.2018.95 1 MRS BULLETIN, v.43, no.5, pp.334 - 339 MRS BULLETIN 43 5 334 339 scie scopus 000432178500012 2-s2.0-85047326517 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Review ATOMIC LAYER DEPOSITION SRTIO3 THIN-FILMS EQUIVALENT OXIDE THICKNESS INITIAL GROWTH-BEHAVIOR DOPED TIO2 FILMS ELECTRICAL-PROPERTIES DIELECTRIC-CONSTANT RU ELECTRODE NM PLASMA nanoscale memory dielectric metallic conductor atomic layer deposition