Kim, Youngjun Ko, Hyungduk Park, Byoungnam 2024-01-19T23:01:50Z 2024-01-19T23:01:50Z 2021-09-03 2018-04-11 0022-3727 https://pubs.kist.re.kr/handle/201004/121482 Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive. English IOP PUBLISHING LTD FIELD-EFFECT TRANSISTORS LIGHT-EMITTING-DIODES QUANTUM-DOT PHOTOVOLTAICS SEMICONDUCTOR NANOCRYSTALS SUBTHRESHOLD SLOPE SOLAR-CELLS PENTACENE TRANSPORT MONOLAYER LAYERS Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface Article 10.1088/1361-6463/aab2c2 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.14 JOURNAL OF PHYSICS D-APPLIED PHYSICS 51 14 scie scopus 000427699700002 2-s2.0-85044921750 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS LIGHT-EMITTING-DIODES QUANTUM-DOT PHOTOVOLTAICS SEMICONDUCTOR NANOCRYSTALS SUBTHRESHOLD SLOPE SOLAR-CELLS PENTACENE TRANSPORT MONOLAYER LAYERS surface traps transistor nanocrystal functional interface