Lee, Jeong Hoon Kwak, Seungmin Lee, Jin-Hyung Kim, Inho Yoo, Yong Kyoung Lee, Tae Hoon Shim, Young-Seok Kim, Jinseok Lee, Kyu Hyoung 2024-01-19T23:02:22Z 2024-01-19T23:02:22Z 2022-01-25 2018-04 1687-4110 https://pubs.kist.re.kr/handle/201004/121511 We report a sputtered PdO decorated TiO2 sensing layer by radiofrequency (RF) sputtering methods and demonstrated gas sensing performance for H-2 gas. We prepared sputtered anatase TiO2 sensing films with 200 nm thickness and deposited a Pd layer on top of the TiO2 films with a thickness ranging from 3 nm to 13 nm. Using an in situ TiO2/Pd multilayer annealing process at 550 degrees C for 1 hour, we observed that Pd turns into PdO by Auger electron spectroscopy (AES) depth profile and confirmed decorated PdO on TiO2 sensing layer from scanning electron microscope (SEM) and atomic-force microscope (AFM). We also observed a positive sensing signal for 3, 4.5, and 6.5 nm PdO decorated TiO2 sensor while we observed negative output signal for a 13.5 nm PdO decorated one. Using a microheater platform, we acquired fast response time as similar to 11 sec and sensitivity as 6 mu V/ppm for 3 nm PdO under 33 mW power. English HINDAWI LTD Sputtered PdO Decorated TiO2 Sensing Layer for a Hydrogen Gas Sensor Article 10.1155/2018/8678519 1 JOURNAL OF NANOMATERIALS, v.2018 JOURNAL OF NANOMATERIALS 2018 N scie scopus 000430612100001 2-s2.0-85046034670 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article MICROHEATER CLUSTERS