Lee, Suyoun Lee, Young Tack Park, Seong Gon Lee, Kyu Hyoung Kim, Sung Wng Hwang, Do Kyung Lee, Kimoon 2024-01-19T23:03:00Z 2024-01-19T23:03:00Z 2021-09-03 2018-04 https://pubs.kist.re.kr/handle/201004/121545 Substitutional atomic doping is one of the most convenient and precise routes to modulate semiconducting material properties. Although two-dimensional (2D) layered transition metal dichalcogenides (TMDs) are of great interest as a prominent semiconducting material due to their unique physical/chemical properties, such a practical atomic doping is still rare, possibly due to the intrinsic localization nature of conduction paths based on d-band states. Here, using single-crystalline Cl-doped SnSe2, the dimensional crossover in carrier transport accompanied by semiconductor-to-metal transition is reported. Nondoped SnSe2 shows semiconducting transport behavior dominated by 2D variable range hopping conduction, exhibiting relatively strong localization of carriers at low-temperature regions. Moderately electron-doped SnSe2 by substitution on Se with higher valent Cl exhibits superior electrical conductivity even than the heavily doped one owing to the higher electron mobility of the former (167 cm2 V−1 s−1 at 2 K). Combined with Raman spectra, temperature dependence of mobility clearly evidences the effective screening of homopolar optical mode phonon compared to typical TMD materials. Detailed characterizations with magnetoresistance behaviors finally demonstrate that the suppression of both homopolar optical mode phonon and carrier localization as retaining low-dimensionality is key for high mobility conduction in electron-doped SnSe2. English Wiley-VCH Verlag Dimensional Crossover Transport Induced by Substitutional Atomic Doping in SnSe2 Article 10.1002/aelm.201700563 1 Advanced Electronic Materials, v.4, no.4 Advanced Electronic Materials 4 4 N scie scopus 000430115000013 2-s2.0-85043503712 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article 2-DIMENSIONAL ELECTRON-GAS P-N-JUNCTIONS RAMAN-SCATTERING MOS2 MAGNETORESISTANCE GRAPHENE MOBILITY NITRIDE MODES LAYER atomic doping 2D materials 2D transport