Lee, Seung Yeon Ju, Byeong-Kwon Kim, Yong Tae 2024-01-19T23:03:08Z 2024-01-19T23:03:08Z 2021-09-03 2018-04 0021-4922 https://pubs.kist.re.kr/handle/201004/121553 The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H-2 gases and has a very low resistivity of 100 mu Omega cm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 degrees C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 degrees C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive. (C) 2018 The Japan Society of Applied Physics. English IOP PUBLISHING LTD ATOMIC LAYER DEPOSITION THROUGH-SILICON PULSE PLASMA THIN-FILMS ELECTROMIGRATION TSV TAN RELIABILITY DEPENDENCE STRESS Performance of WCN diffusion barrier for Cu multilevel interconnects Article 10.7567/JJAP.57.04FC01 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.57, no.4 JAPANESE JOURNAL OF APPLIED PHYSICS 57 4 scie scopus 000430981800019 2-s2.0-85044453830 Physics, Applied Physics Article; Proceedings Paper ATOMIC LAYER DEPOSITION THROUGH-SILICON PULSE PLASMA THIN-FILMS ELECTROMIGRATION TSV TAN RELIABILITY DEPENDENCE STRESS WCN diffusion barrier Cu Multilevel interconnects low resistivity Cu migration low contact resistance high temp. reliability