Lee, Ki-Heon Han, Chang-Yeol Jang, Eun-Pyo Jo, Jung-Ho 홍승기 Hwang, Jun Yeon Choi, Eunsoo Hwang, Jin-Ha Yang, Heesun 2024-01-19T23:03:11Z 2024-01-19T23:03:11Z 2021-09-03 2018-04 2040-3364 https://pubs.kist.re.kr/handle/201004/121556 To date, most of the studies on quantum dot-light-emitting diodes (QLEDs) have been dedicated to the fabrication of high-efficiency monochromatic devices. However, for the ultimate application of QLEDs to the next-generation display devices, QLEDs should possess a full-color emissivity. In this study, we report the fabrication of all-solution-processed full-color-capable white QLEDs with a standard device architecture, where sequentially stacked blue (B)/green (G)/red (R) quantum dot (QD)-emitting layers (EMLs) are sandwiched by poly(9-vinylcarbazole) as the hole transport layer and ZnO nanoparticles (NPs) as the electron transport layer. To produce interlayer mixing-free, well-defined B/G/R QD layering assemblies via successive spin casting, an ultrathin ZnO NP buffer is inserted between different-colored QD layers. The present full-color-capable white QLED exhibits high device performance with the maximum values of 16241 cd m(-2) for luminance and 6.8% for external quantum efficiency. The promising results indicate that our novel EML design of ZnO NP buffer-mediated QD layer stacking may afford a viable means towards bright, efficient full-color-capable white devices. English Royal Society of Chemistry Full-color capable light-emitting diodes based on solution-processed quantum dot layer stacking Article 10.1039/c8nr00307f 1 Nanoscale, v.10, no.14, pp.6300 - 6305 Nanoscale 10 14 6300 6305 N scie scopus 000429530400008 2-s2.0-85045137794 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article HIGHLY EFFICIENT PERFORMANCE DEVICES MULTILAYER QD LED Full color Layer structure