Park, Gi Soon Chu, Van Ben Kim, Byoung Woo Kim, Dong-Wook Oh, Hyung-Suk Hwang, Yun Jeong Min, Byoung Koun 2024-01-19T23:03:35Z 2024-01-19T23:03:35Z 2021-09-03 2018-03-28 1944-8244 https://pubs.kist.re.kr/handle/201004/121577 An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis. English American Chemical Society CHALCOPYRITE GROWTH CUINSE2 DEVICE Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)(2) Thin Film Solar Cell through Interface Engineering Article 10.1021/acsami.8b00526 1 ACS Applied Materials & Interfaces, v.10, no.12, pp.9894 - 9899 ACS Applied Materials & Interfaces 10 12 9894 9899 scie scopus 000428972700003 2-s2.0-85044663184 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article CHALCOPYRITE GROWTH CUINSE2 DEVICE CIGS thin-film solar cell solution-process grain growth p-n junction interface engineering band alignment