Geum, Dae-Myeong Kim, SangHyeon Kang, SooSeok Kim, Hosung Park, Hwanyeol Rho, Il Pyo Ahn, Seung Yeop Song, Jindong Choi, Won Jun Yoon, Euijoon 2024-01-19T23:04:20Z 2024-01-19T23:04:20Z 2021-09-03 2018-03-05 1094-4087 https://pubs.kist.re.kr/handle/201004/121616 In this paper, InAs0.81Sb0.19-based hetero-junction photovoltaic detector (HJPD) with an In0.2Al0.8Sb barrier layer was grown on GaAs substrates. By using technology computer aided design (TCAD), a design of a barrier layer that can achieve nearly zero valance band offsets was accomplished. A high quality InAs0.81Sb0.19 epitaxial layer was obtained with relatively low threading dislocation density (TDD), calculated from a high-resolution X-ray diffraction (XRD) measurement. This layer showed a Hall mobility of 15,000 cm(2)/V.s, which is the highest mobility among InAsSb layers with an Sb composition of around 20% grown on GaAs substrates. Temperature dependence of dark current, photocurrent response and responsivity were measured and analyzed for fabricated HJPD. HJPD showed the clear photocurrent response having a long cutoff wavelength of 5.35 mu m at room temperature. It was observed that the dark current of HJPDs is dominated by the diffusion limited current at temperatures ranging from 200K to room temperature from the dark current analysis. Peak responsivity of HJPDs exhibited the 1.18 A/W and 15 mA/W for 83K and a room temperature under zero bias condition even without anti-reflection coating (ARC). From these results, we believe that HJPDs could be an appropriate PD device for future compact and low power dissipation mid-infrared on-chip sensors and imaging devices. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement English OPTICAL SOC AMER QUANTUM-WELL INASSB INSB PHOTONICS Room temperature operation of mid-infrared InAs0.81Sb0.19 based photovoltaic detectors with an In0.2Al0.8Sb barrier layer grown on GaAs substrates Article 10.1364/OE.26.006249 1 OPTICS EXPRESS, v.26, no.5, pp.6249 - 6259 OPTICS EXPRESS 26 5 6249 6259 scie scopus 000427147200100 2-s2.0-85042790342 Optics Optics Article QUANTUM-WELL INASSB INSB PHOTONICS