Im, Ki-Sik Atmaca, Gokhan Won, Chul-Ho Caulmilone, Raphael Cristoloveanu, Sorin Kim, Yong-Tae Lee, Jung-Hee 2024-01-19T23:04:46Z 2024-01-19T23:04:46Z 2021-09-03 2018-03 2168-6734 https://pubs.kist.re.kr/handle/201004/121640 Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that the electrons in the isolated nanowire channel do not suffer from trapping effects. However, the dc current level measured at high drain and gate voltage is reduced to approximately one half of the value measured in dynamic mode. This is attributed to the difficulty in heat dissipation because the suspended lateral nanowire channel is thermally isolated from the substrate. However, the heat dissipation is mitigated as the nanowire size increases. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC ELECTRON-TRANSPORT ALGAN/GAN CONDUCTIVITY TRANSISTORS SIMULATION STRAIN Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs Article 10.1109/JEDS.2018.2806930 1 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.6, no.1, pp.354 - 359 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 1 354 359 scie scopus 000428654200019 2-s2.0-85042189873 Engineering, Electrical & Electronic Engineering Article ELECTRON-TRANSPORT ALGAN/GAN CONDUCTIVITY TRANSISTORS SIMULATION STRAIN GaN MOSFET nanowire gate-all-around GaN-on-insulator dynamic mode self-heating