Ju, Gun wu Kim, Hansung Shim, Jae Phil Kim, Seong Kwang Lee, Byeong-Hyeon Won, Sung Ok Kim, Sanghyeon Kim, Hyung-jun 2024-01-19T23:04:55Z 2024-01-19T23:04:55Z 2021-09-03 2018-03 0040-6090 https://pubs.kist.re.kr/handle/201004/121648 The anisotropic surface morphology of a tensile-strained In0.42Al0.58As layer grown on an InP(100) substrate was investigated by means of observing the cross-hatch patterns between two orthogonal in-plane directions: [011] and [0 (1) over bar1]. Analysis results using atomic force microscopy evidently reveal a higher array density along direction [011], with an asymmetrically sharp ridge across each array. Conversely, there was a much lower array density along direction [0 (1) over bar1] and a symmetrically big mound-like ridges. Our X-ray diffraction and energy-dispersive spectroscopy analyses showed a more substantial amount of strain relaxation along direction [0 (1) over bar1] due to preferential indium incorporation along [011]. As a result, the big mound ridges over the arrays along direction [0 (1) over bar1] were believed to be the result of local indium accumulation. Additionally, microcrack formations, penetrating into substrates, were exclusively formed on top of the mound ridges with central depressions along direction [0 (1) over bar1], presumably causing additional anisotropic strain relaxation. English ELSEVIER SCIENCE SA Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates Article 10.1016/j.tsf.2018.01.026 1 THIN SOLID FILMS, v.649, pp.38 - 42 THIN SOLID FILMS 649 38 42 N scie scopus 000427524100007 2-s2.0-85041446968 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article CROSS-HATCH SURFACE GAAS 001 HETEROSTRUCTURES DISLOCATION INGAAS EVOLUTION SI(001) Epitaxial growth III-V compound semiconductor Cross-hatch array Preferential surface diffusion Microcrack Anisotropic strain relaxation