Jeon, Dae-Young Park, So Jeong Mouis, Mireille Barraud, Sylvain Kim, Gyu-Tae Ghibaudo, Gerard 2024-01-19T23:30:17Z 2024-01-19T23:30:17Z 2021-09-03 2018-03 0038-1101 https://pubs.kist.re.kr/handle/201004/121656 Operation mode dependent series resistance (R-sd) behavior of junctionless transistors (JLTs) has been discussed in detail. R-sd was increased for decreasing gate bias in bulk conduction regime, while a constant value of R-sd was found in accumulation operation mode. Those results were compared to conventional inversion-mode (IM) transistors, verified by 2D numerical simulation and temperature dependence of extracted R-sd. This work provides key information for a better understanding of JLT operation affected by R-sd effects with different state of conduction channel. English PERGAMON-ELSEVIER SCIENCE LTD NANOWIRE TRANSISTORS PARAMETER EXTRACTION Series resistance in different operation regime of junctionless transistors Article 10.1016/j.sse.2017.12.013 1 SOLID-STATE ELECTRONICS, v.141, pp.92 - 95 SOLID-STATE ELECTRONICS 141 92 95 scie scopus 000425491200014 2-s2.0-85041462380 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article NANOWIRE TRANSISTORS PARAMETER EXTRACTION Junctionless transistors (JLTs) Series resistance (R-sd) Bulk channel Accumulation channel Numerical simulation and temperature dependence