Ju, Gunwu Na, Byung Hoon Park, Kwangwook Hwang, Hyeong-Yong Jho, Young-Dahl Myoung, NoSoung Yim, Sang-Youp Kim, Hyung-jun Lee, Yong Tak 2024-01-19T23:30:29Z 2024-01-19T23:30:29Z 2021-09-03 2018-03 0021-4922 https://pubs.kist.re.kr/handle/201004/121667 We examined the structural and optical properties of a crown-shaped quantum well (CSQW) to suppress nonradiative recombination. To reduce carrier loss in defect traps at the well/barrier interface, the CSQW was designed to concentrate carriers in the central region by tailoring the bandgap energy. Temperature-dependent photoluminescence measurements showed that the CSQW had a high activation energy and low potential fluctuation. In addition, the long carrier lifetime of the CSQW at high temperatures can be interpreted as indicating a decrease in carrier loss at defect traps. (C) 2018 The Japan Society of Applied Physics English IOP PUBLISHING LTD REFRACTIVE-INDEX CHANGE TEMPERATURE-DEPENDENCE LOW-VOLTAGE ELECTRIC-FIELD ABSORPTION DYNAMICS PHOTOLUMINESCENCE ELECTROABSORPTION ENHANCEMENT MODULATORS Suppressing nonradiative recombination in crown-shaped quantum wells Article 10.7567/JJAP.57.030305 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.57, no.3 JAPANESE JOURNAL OF APPLIED PHYSICS 57 3 scie scopus 000424470000003 2-s2.0-85042654036 Physics, Applied Physics Article REFRACTIVE-INDEX CHANGE TEMPERATURE-DEPENDENCE LOW-VOLTAGE ELECTRIC-FIELD ABSORPTION DYNAMICS PHOTOLUMINESCENCE ELECTROABSORPTION ENHANCEMENT MODULATORS quantum well GaAs recombination crown-shaped