Lee, Joo-hyeon Kim, Hyung-jun Chang, Joonyeon Han, Suk Hee Koo, Hyun Cheol Sayed, Shehrin Hong, Seokmin Datta, Supriyo 2024-01-19T23:31:02Z 2024-01-19T23:31:02Z 2021-09-03 2018-02-21 2045-2322 https://pubs.kist.re.kr/handle/201004/121694 In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (R-P) and antiparallel (R-AP) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., R-AP(1) > R-P > R-AP(2), up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm. English NATURE PUBLISHING GROUP ELECTRICAL DETECTION PRECESSION INSULATOR Multi-terminal spin valve in a strong Rashba channel exhibiting three resistance states Article 10.1038/s41598-018-21760-9 1 SCIENTIFIC REPORTS, v.8 SCIENTIFIC REPORTS 8 scie scopus 000425590600021 2-s2.0-85053809263 Multidisciplinary Sciences Science & Technology - Other Topics Article ELECTRICAL DETECTION PRECESSION INSULATOR Rashba effect Multi-terminal spin valve Reciprocity