Kim, SangHyeon Han, Jae-Hoon Shim, Jae-Phil Kim, Hyung-Jun Choi, Won Jun 2024-01-19T23:31:30Z 2024-01-19T23:31:30Z 2021-09-03 2018-02-01 2159-3930 https://pubs.kist.re.kr/handle/201004/121718 We propose a new Ge waveguide platform on Si substrates using F- and Y-based insulator cladding such as CaF2 and Y2O3, which have a small refractive index, broad transparency range, and high thermal conductivity. First, we verified the platform by optical mode simulation, showing that Mid-infrared (MID-IR) light is well confined in the proposed Ge waveguide due to the large differences in the refractive indexes of Ge and the insulators. We also investigated the thermal aspects of the platform in order to quickly dissipate the heat for stable light source integration. It was found that our platform provided better thermal dissipation than conventional SOI platforms due to large thermal conductivity of CaF2 and Y2O3. Furthermore, we provide a fabrication method for a Ge-on-insulator (GOI) platform using wafer bonding and splitting techniques. Finally, the optical transparency of the materials used in the platform were characterized at the MID-IR wavelength range and demonstrate that the platform can cover at wide wavelength range of up to at least 13 mu m. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement English OPTICAL SOC AMER WAVE-GUIDES SILICON PHOTONICS BROAD-BAND GERMANIUM LASER WAFER SPECTROSCOPY FILMS Verification of Ge-on-insulator structure for a mid-infrared photonics platform Article 10.1364/OME.8.000440 1 OPTICAL MATERIALS EXPRESS, v.8, no.2, pp.440 - 451 OPTICAL MATERIALS EXPRESS 8 2 440 451 scie scopus 000425921600025 2-s2.0-85041080733 Materials Science, Multidisciplinary Optics Materials Science Optics Article WAVE-GUIDES SILICON PHOTONICS BROAD-BAND GERMANIUM LASER WAFER SPECTROSCOPY FILMS