Kim, Jeeson Ahmed, Taimur Nili, Hussein Yang, Jiawei Jeong, Doo Seok Beckett, Paul Sriram, Sharath Ranasinghe, Damith C. Kavehei, Omid 2024-01-19T23:31:39Z 2024-01-19T23:31:39Z 2022-01-25 2018-02 1556-6013 https://pubs.kist.re.kr/handle/201004/121727 Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic ionic conduction behavior, intrinsic nonlinear current-voltage characteristics, and their well-known nano-fabrication process variability might normally be considered disadvantageous ReRAM features. However, using a combination of a novel architecture and special peripheral circuitry, this paper exploits these non-idealities in a physical one-way function, nonlinear resistive PUF, potentially applicable to a variety of cyber-physical security applications. We experimentally verify the performance of valency change mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to supporting a massive pool of challenge-response pairs (CRPs), using a combination of experiment and simulation our proposed PUF exhibits a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory Article 10.1109/TIFS.2017.2756562 1 IEEE TRANSACTIONS ON INFORMATION FORENSICS AND SECURITY, v.13, no.2, pp.437 - 448 IEEE TRANSACTIONS ON INFORMATION FORENSICS AND SECURITY 13 2 437 448 N scie scopus 000417894200014 2-s2.0-85030710253 Computer Science, Theory & Methods Engineering, Electrical & Electronic Computer Science Engineering Article POWER ANALYSIS SECURITY PUFS AUTHENTICATION IDENTIFICATION DESIGN Physical unclonable function redox-based resistive switching memory