Han, Sangmoon Choi, Ilgyu Lee, Kwanjae Lee, Cheul-Ro Lee, Seoung-Ki Hwang, Jeongwoo Chung, Dong Chul Kim, Jin Soo 2024-01-19T23:32:05Z 2024-01-19T23:32:05Z 2021-09-03 2018-02 0361-5235 https://pubs.kist.re.kr/handle/201004/121751 We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 k Omega and 0.19 Omega cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 k Omega and 0.39 Omega cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature. English SPRINGER SILICON NANOWIRES GROWTH MOBILITY PHASE TRANSPORT DIAMETER Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors Article 10.1007/s11664-017-5849-2 1 JOURNAL OF ELECTRONIC MATERIALS, v.47, no.2, pp.944 - 948 JOURNAL OF ELECTRONIC MATERIALS 47 2 944 948 scie scopus 000419791800007 2-s2.0-85032036704 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article; Proceedings Paper SILICON NANOWIRES GROWTH MOBILITY PHASE TRANSPORT DIAMETER InAs nanowire structural properties electrical properties field-effect transistor