Kim, Jong Cheol Lee, Jinhyung Kim, Jongsik Singh, Rajiv K. Jawali, Puneet Subhash, Ghatu Lee, Haigun Arjunan, Arul Chakkaravarthi 2024-01-19T23:33:33Z 2024-01-19T23:33:33Z 2021-09-03 2018-01-01 1359-6462 https://pubs.kist.re.kr/handle/201004/121828 This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD POWER ELECTRONICS TRANSISTORS DEVICE HEMTS Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture Article 10.1016/j.scriptamat.2017.08.041 1 SCRIPTA MATERIALIA, v.142, pp.138 - 142 SCRIPTA MATERIALIA 142 138 142 scie scopus 000413281100031 2-s2.0-85028732260 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article POWER ELECTRONICS TRANSISTORS DEVICE HEMTS GaN on diamond Spark plasma sintering Direct bonding Heat dissipation Immiscibility between Ga and C