Ryu, Sungyeon Kim, Seong Keun Choi, Byung Joon 2024-01-19T23:34:13Z 2024-01-19T23:34:13Z 2021-09-03 2018-01 0361-5235 https://pubs.kist.re.kr/handle/201004/121865 To efficiently increase the capacity of resistive switching random-access memory (RRAM) while maintaining the same area, a vertical structure similar to a vertical NAND flash structure is needed. In addition, the sneak-path current through the half-selected neighboring memory cell should be mitigated by integrating a selector device with each RRAM cell. In this study, an integrated vertical-type RRAM cell and selector device was fabricated and characterized. Ta2O5 as the switching layer and TaOxNy as the selector layer were used to preliminarily study the feasibility of such an integrated device. To make the side contact of the bottom electrode with active layers, a thick Al2O3 insulating layer was placed between the Pt bottom electrode and the Ta2O5/TaOxNy stacks. Resistive switching phenomena were observed under relatively low currents (below 10 mu A) in this vertical-type RRAM device. The TaOxNy layer acted as a nonlinear resistor with moderate nonlinearity. Its low-resistance-state and high-resistance-state were well retained up to 1000 s. English SPRINGER LOW-POWER LAYER Resistive Switching of Ta2O5-Based Self-Rectifying Vertical-Type Resistive Switching Memory Article 10.1007/s11664-017-5787-z 1 JOURNAL OF ELECTRONIC MATERIALS, v.47, no.1, pp.162 - 166 JOURNAL OF ELECTRONIC MATERIALS 47 1 162 166 scie scopus 000418580800019 2-s2.0-85029527753 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Engineering Materials Science Physics Article LOW-POWER LAYER Resistive switching vertical-type resistive random access memory self-rectifying conducting filament