Park, So Jeong Jeon, Dae-Young Piontek, Sabrina Grube, Matthias Ocker, Johannes Sessi, Violetta Heinzig, Andre Trommer, Jens Kim, Gyu-Tae Mikolajick, Thomas Weber, Walter M. 2024-01-19T23:34:15Z 2024-01-19T23:34:15Z 2021-09-03 2018-01 2199-160X https://pubs.kist.re.kr/handle/201004/121867 Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated. English WILEY SILICON NANOWIRE SONOS MEMORY BARRIER Reconfigurable Si Nanowire Nonvolatile Transistors Article 10.1002/aelm.201700399 1 ADVANCED ELECTRONIC MATERIALS, v.4, no.1 ADVANCED ELECTRONIC MATERIALS 4 1 scie scopus 000419670400019 2-s2.0-85038089904 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article SILICON NANOWIRE SONOS MEMORY BARRIER intrinsic silicon nanowires nonvolatile transistors reconfigurable field effect transistors reconfigurable memory Schottky barrier