Yeo, So Young Park, Sangsik Yi, Yeon Jin Kim, Do Hwan Lim, Jung Ah 2024-01-20T00:00:41Z 2024-01-20T00:00:41Z 2021-09-03 2017-12-13 1944-8244 https://pubs.kist.re.kr/handle/201004/121922 A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa(-1) and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand. English American Chemical Society FIELD-EFFECT TRANSISTORS SKIN APPLICATIONS ELECTRONIC SKIN MATRIX Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures Article 10.1021/acsami.7b15960 1 ACS Applied Materials & Interfaces, v.9, no.49, pp.42996 - 43003 ACS Applied Materials & Interfaces 9 49 42996 43003 scie scopus 000418204300064 2-s2.0-85038213554 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article FIELD-EFFECT TRANSISTORS SKIN APPLICATIONS ELECTRONIC SKIN MATRIX flexible pressure sensor organic field-effect transistors printing self-organization of organic semiconductor electronic skin