Kwon, Soonbang Jang, Seonghoon Choi, Jae-Wan Choi, Sanghyeon Jang, Sukjae Kim, Tae-Wook Wang, Gunuk 2024-01-20T00:01:35Z 2024-01-20T00:01:35Z 2021-09-03 2017-12 1530-6984 https://pubs.kist.re.kr/handle/201004/121971 The controllability of switching conductive filaments is one of the central issues in the development of reliable metal-oxide resistive memory because the random dynamic nature and formation of the filaments pose an obstacle to desirable switching performance. Here, we introduce a simple and novel approach to control and form a single silicon nanocrystal (Si-NC) filament for use in SiOx memory devices. The filament is formed with a confined vertical nanoscale gap by using a well-defined single vertical truncated conical nanopore (StcNP) structure. The physical dimensions of the Si-NC filaments such as number, size, and length, which have a significant influence on the switching properties, can be simply engineered by the breakdown of an Au wire through different StcNP structures. In particular, we demonstrate that the designed SiOx memory junction with a StcNP of pore depth of similar to 75 nrn and a bottom diameter of similar to 10 nm exhibited a switching speed of up to 6 ns for both set and reset process, significantly faster than reported SiOx memory devices. The device also exhibited a high ON-OFF ratio, multistate storage ability, acceptable endurance, and retention stability. The influence of the physical dimensions of the StcNP on the switching features is discussed based on the simulated temperature profiles of the Au wire and the nanogap size generated inside the StcNP structure during electrornigration. English AMER CHEMICAL SOC OXIDE ELECTROMIGRATION CRYSTALLIZATION FABRICATION MECHANISMS DEVICE MODEL Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiOx Memory Article 10.1021/acs.nanolett.7b03373 1 NANO LETTERS, v.17, no.12, pp.7462 - 7470 NANO LETTERS 17 12 7462 7470 scie scopus 000418393300040 2-s2.0-85038207799 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article OXIDE ELECTROMIGRATION CRYSTALLIZATION FABRICATION MECHANISMS DEVICE MODEL Switching conductive filament single nanopore structure breakdown process resistive memory SiOx