Seo, Seunggi Yeo, Byung Chul Han, Sang Soo Yoon, Chang Mo Yang, Joon Young Yoon, Jonggeun Yoo, Choongkeun Kim, Ho-jin Lee, Yong-baek Lee, Su Jeong Myoung, Jae-Min Lee, Han-Bo-Ram Kim, Woo-Hee Oh, Il-Kwon Kim, Hyungjun 2024-01-20T00:02:46Z 2024-01-20T00:02:46Z 2021-09-03 2017-11-29 1944-8244 https://pubs.kist.re.kr/handle/201004/122035 The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-tenninated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of similar to 60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology. English American Chemical Society SELF-ASSEMBLED MONOLAYERS ALUMINUM-OXIDE FILMS NUCLEATION CHEMISTRY GROWTH LITHOGRAPHY DIELECTRICS ALGORITHMS GRAPHENE Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns Article 10.1021/acsami.7b13365 1 ACS Applied Materials & Interfaces, v.9, no.47, pp.41607 - 41617 ACS Applied Materials & Interfaces 9 47 41607 41617 scie scopus 000417005900061 2-s2.0-85036464518 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article SELF-ASSEMBLED MONOLAYERS ALUMINUM-OXIDE FILMS NUCLEATION CHEMISTRY GROWTH LITHOGRAPHY DIELECTRICS ALGORITHMS GRAPHENE area-selective ALD Al2O3 self-assembled monolayer nanopattern atomic layer deposition