Lee, Won-Jae Parmar, Narendra S. Choi, Ji-Won 2024-01-20T00:03:19Z 2024-01-20T00:03:19Z 2021-09-03 2017-11-15 1369-8001 https://pubs.kist.re.kr/handle/201004/122062 High work function molybdenum (Mo) and rhenium (Re) di-oxides were studied without vacuum and thermal process to investigate the contact properties on p-type Si and GaN semiconductors. Polyvinyl alcohol (5 wt% PVA) was used as a binder for the metal oxide powder. ReO2 showed lower electrical resistivity < 0.023 +/- 0.004 Omega cm and better contact characteristics compared to MoO2. Ohmic contacts were formed easily on p-type Si (rho = 9.77 Omega cm) using ReO2 and MoO2. The metal oxide/semiconductor Schottky diodes fabricated by forming contacts on n-type Si (rho = 2.44 Omega cm) were investigated by comparing diode parameters indicating different contact barrier properties of metal oxides. As a wide energy bandgap semiconductor, p-type GaN was utilized to investigate metal oxide contact properties on a high work function semiconductor. Ohmic contact on p-type GaN was obtained using ReO2 after the surface treatment by boiling aqua regia. English ELSEVIER SCI LTD MG-DOPED GAN OHMIC CONTACTS CONDUCTION High work function MoO2 and ReO2 contacts for p-type Si and GaN by a room-temperature non-vacuum process Article 10.1016/j.mssp.2017.08.034 1 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.71, pp.374 - 377 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 71 374 377 scie scopus 000412963700055 2-s2.0-85028957665 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Engineering Materials Science Physics Article MG-DOPED GAN OHMIC CONTACTS CONDUCTION ReO2 MoO2 GaN High work function Ohmic contact Non-vacuum process