Seo, Tae Hoon Lee, Gun Hee Park, Ah Hyun Cho, Hyunjin Kim, Jun-Hee Chandramohan, S. Jeon, Seong-Ran Jang, Se Gyu Kim, Myung Jong Suh, Eun-Kyung 2024-01-20T00:03:23Z 2024-01-20T00:03:23Z 2021-09-03 2017-11-14 2040-3364 https://pubs.kist.re.kr/handle/201004/122066 High-density threading dislocations, the presence of biaxial compressive strain, and heat generation are the major limitations obstructing the performance and reliability of light emitting diodes (LEDs). Herein, we demonstrate a facile epitaxial lateral overgrowth (ELOG) method by incorporating boron nitride nanotubes (BNNTs) on a sapphire substrate by spray coating to resolve the above issues. Atomic force microscopy, X-ray diffraction, micro-Raman, and photoluminescence measurements confirmed the growth of a high quality GaN epilayer on the BNNT-coated sapphire substrate with reduced threading dislocations and compressive strain owing to the ELOG process. GaN LEDs fabricated using this approach showed a significant enhancement in the internal quantum efficiency and electroluminescence intensity compared to conventional LEDs grown on sapphire. Moreover, reduced efficiency droop and surface temperature at high injection currents were achieved due to the excellent thermal stability and conductivity of BNNTs. Based on our findings we infer that the BNNTs would be a promising material for high power devices vulnerable to self-heating problems. English ROYAL SOC CHEMISTRY VAPOR-PHASE EPITAXY PATTERNED SAPPHIRE SUBSTRATE HIGH-QUALITY GAN DEFORMATION POTENTIALS QUANTUM EFFICIENCY LATERAL-OVERGROWTH NEAR-ULTRAVIOLET III-NITRIDES GROWTH FILMS Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes Article 10.1039/c7nr04508e 1 NANOSCALE, v.9, no.42, pp.16223 - 16231 NANOSCALE 9 42 16223 16231 scie scopus 000414349100015 2-s2.0-85032910409 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article VAPOR-PHASE EPITAXY PATTERNED SAPPHIRE SUBSTRATE HIGH-QUALITY GAN DEFORMATION POTENTIALS QUANTUM EFFICIENCY LATERAL-OVERGROWTH NEAR-ULTRAVIOLET III-NITRIDES GROWTH FILMS BNNT LED heat sinking stress relaxation