Kim, Dae-sik Jeong, Woo Seop Ko, Hyungduk Lee, Jae-Sang Byun, Dongjin 2024-01-20T00:03:44Z 2024-01-20T00:03:44Z 2021-09-03 2017-11-01 0040-6090 https://pubs.kist.re.kr/handle/201004/122086 Epitaxial lateral overgrowth (ELO) process of gallium nitride (GaN) films on cone-shaped patterned sapphire substrate (PSS), which was pretreated by ion-implantation was performed by using a metal organic chemical vapor deposition. A 250-nm-thick silicon dioxide (SiO2) mask was covered on the planar surface of the PSS to protect them from ion-implantation damages, whereas the cone-shaped patterns of the PSS were exposed to collide with the N+ ions. The ion-implantation pretreatment was selectively carried out on the cone-shaped pattern of PSS at 67.5 keV with a high dose of 5 x 1017 cm(-2). As a result of ion-implantation pretreatment, nucleation growth of GaN poly-grains was inhibited on the cone-shaped patterns with various crystal planes, such as c-like plane, R-like plane, and n-like plane. Surface roughness and crystal quality of GaN films grown on ion-implanted PSS were improved owing to the inhibition of nucleation growth on the patterns. The ion-implantation pretreatment is a very promising technique in the ELO process of GaN on an uneven substrate such as a cone-shaped PSS that includes various crystal planes. (C) 2017 Published by Elsevier B.V. English ELSEVIER SCIENCE SA BUFFER LAYERS NITRIDE DIODES Pretreatment by selective ion-implantation for epitaxial lateral overgrowth of GaN on patterned sapphire substrate Article 10.1016/j.tsf.2017.06.042 1 THIN SOLID FILMS, v.641, pp.2 - 7 THIN SOLID FILMS 641 2 7 scie scopus 000413805700002 2-s2.0-85028594617 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper BUFFER LAYERS NITRIDE DIODES Ion-implantation Patterned sapphire substrate Gallium nitride Epitaxial lateral overgrowth Metal organic chemical vapor deposition