Sharma, Aditya Varshney, Mayora Shin, Hyun-Joon Chae, Keun Hwa Won, Sung Ok 2024-01-20T00:03:59Z 2024-01-20T00:03:59Z 2021-09-04 2017-11 2046-2069 https://pubs.kist.re.kr/handle/201004/122098 In this study, spectroscopic investigations are employed to quantify the Ga distribution over the tetrahedral/octahedral sites and to assimilate the luminescence properties in the barely reported gamma-Ga2.67O4 : Sm nanoparticles. O K-edge XANES are convincing the decreased electron density in the outermost hybrid orbits of O 2p and Ga 4p, and the movement of p electrons to the inner hybrid orbits with s character under the distorted oxygen environment of gamma-Ga2.67O4 : Sm nanoparticles. The Ga K/L-edge XANES and Sm L-3/M-5,M-4-edge XANES results have confirmed Ga3+ and Sm3+ ions, respectively, in the gamma-Ga2.67O4 : Sm nanoparticles. Quantitative determination of the cation distribution is performed by applying Ga K-edge XANES data analysis, which is further substantiated by an EXAFS data simulation, and conveys a Ga-O4 tetrahedra/Ga-O6 octahedra ratio (Ga(t)/Ga(o)) of similar to 0.9, similar to 1.4, similar to 1.5 and similar to 1.6 for the beta-Ga2O3, gamma-Ga2.67O4, gamma-Ga2.67O4 : 5Sm and gamma-Ga2.67O4 : 10Sm samples, respectively, which signify the Sm doping induced deformation of Ga-O6 octahedra via the formation of oxygen defects. Multiple luminescence centres, facilitated by the Ga-O6 octahedra distortion, O vacancies and Sm3+ ions, have helped in a significant enhancement of the emission characteristics. Our spectroscopy investigations, with the help of XANES and EXAFS, may open new opportunities to the mechanistic understanding of metal-O polyhedra alteration induced fruition of physical/chemical properties in the less explored meta stable phases of other complex oxides. English ROYAL SOC CHEMISTRY GALLIUM OXIDE ELECTRONIC-STRUCTURE MECHANISTIC INSIGHTS THIN-FILMS NANOPARTICLES PHOTOLUMINESCENCE XANES EXAFS EDGE TEMPERATURE Investigation on cation distribution and luminescence in spinel phase gamma-Ga3-delta O4 : Sm nanostructures using X-ray absorption spectroscopy Article 10.1039/c7ra10341g 1 RSC ADVANCES, v.7, no.83, pp.52543 - 52554 RSC ADVANCES 7 83 52543 52554 scie scopus 000415349700022 2-s2.0-85034599663 Chemistry, Multidisciplinary Chemistry Article GALLIUM OXIDE ELECTRONIC-STRUCTURE MECHANISTIC INSIGHTS THIN-FILMS NANOPARTICLES PHOTOLUMINESCENCE XANES EXAFS EDGE TEMPERATURE nanoparticle XANES EXAFS XRD Photoluminescence nanostructures