Woo, Jeong-Hyun Kim, Young-Cheon Kim, Si-Hoon Jang, Jae-il Han, Heung Nam Choi, Kyoung Jin Kim, Inho Kim, Ju-Young 2024-01-20T00:04:03Z 2024-01-20T00:04:03Z 2021-09-03 2017-11 1359-6462 https://pubs.kist.re.kr/handle/201004/122102 Four-point bending tests are performed on 50-mu m-thick single-crystalline silicon (Si) wafers with dome-and pyramid-shaped surface patterns, which are used as flexible Si solar cells. Surface patterns, which act as stress concentrators, reduce the flexural strengths, leading to larger critical bending radius. The critical bending radii of surface-textured Si are much smaller than the calculated values for a single-notch geometry. The finite element analysis shows that the stress concentrations at the tips of the surface patterns effectively disperse in fine and periodic dome and irregular pyramid patterns. (C) 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD SOLAR-CELLS STRENGTH FILMS Critical bending radius of thin single-crystalline silicon with dome and pyramid surface texturing Article 10.1016/j.scriptamat.2017.06.047 1 SCRIPTA MATERIALIA, v.140, pp.1 - 4 SCRIPTA MATERIALIA 140 1 4 scie scopus 000408287700001 2-s2.0-85021665686 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Science & Technology - Other Topics Materials Science Metallurgy & Metallurgical Engineering Article SOLAR-CELLS STRENGTH FILMS Surface modification Bending test Solar cells Finite element analysis Stress concentration