Choi, Minho Choi, Heechae Kwon, Sehyun Kim, Seungchul Lee, Kwang-Ryeol Ahn, Jinho Kim, Yong Tae 2024-01-20T00:04:07Z 2024-01-20T00:04:07Z 2021-09-03 2017-11 1862-6254 https://pubs.kist.re.kr/handle/201004/122106 Using a computational high-throughput screening method, 29 doping elements have been investigated for improving the thermal and electrical characteristics of In3SbTe2 (IST) phase-change material. Among the 29 dopants, it is found that Y offers largest distortion in the lattice structure of IST with negative doping formation energy while Y substitutes the In site. The atomic lattice images clearly show that the In site is substituted by Y and the distortion angles of the Y-doped IST (Y-IST) are well matched with the calculated results of density functional theory (DFT). Set/reset speed of the Y-IST phase-change memory is faster than IST and Ge2Sb2Te5 (GST) devices, which is strongly related with the fast and stable phase transition due to the larger lattice distortion. The power consumption of the Y-IST device is also less than a fourth of that of the GST device. English WILEY-V C H VERLAG GMBH GENERALIZED GRADIENT APPROXIMATION CHANGE MEMORY ENERGY Effects of Y Dopant on Lattice Distortion and Electrical Properties of In3SbTe2 Phase-Change Material Article 10.1002/pssr.201700275 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.11, no.11 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 11 11 scie scopus 000414770100006 2-s2.0-85030089311 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article GENERALIZED GRADIENT APPROXIMATION CHANGE MEMORY ENERGY distortion doping In3SbTe2 phase change materials phase change memory