Lee, Seung Min Yum, Jung Hwan Larsen, Eric S. Lee, Woo Chul Kim, Seong Keun Bielawski, Christopher W. Oh, Jungwoo 2024-01-20T00:30:26Z 2024-01-20T00:30:26Z 2021-09-03 2017-10-16 2045-2322 https://pubs.kist.re.kr/handle/201004/122161 Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications. English NATURE PUBLISHING GROUP THIN-FILM TRANSISTOR TECHNOLOGY Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide Article 10.1038/s41598-017-13693-6 1 SCIENTIFIC REPORTS, v.7 SCIENTIFIC REPORTS 7 scie scopus 000413048000016 2-s2.0-85031781536 Multidisciplinary Sciences Science & Technology - Other Topics Article THIN-FILM TRANSISTOR TECHNOLOGY silicon-on-insulator Beryllium oxide Atomic layer deposition