Baik, Min Kang, Hang-Kyu Kang, Yu-Seon Jeong, Kwang-Sik An, Youngseo Choi, Seongheum Kim, Hyoungsub Song, Jin-Dong Cho, Mann-Ho 2024-01-20T00:32:55Z 2024-01-20T00:32:55Z 2021-09-05 2017-09-12 2045-2322 https://pubs.kist.re.kr/handle/201004/122290 Changes in the electrical properties and thermal stability of HfO2 grown on Al2O3-passivated InSb by atomic layer deposition (ALD) were investigated. The deposited HfO2 on InSb at a temperature of 200 degrees C was in an amorphous phase with low interfacial defect states. During post-deposition annealing (PDA) at 400 degrees C, In-Sb bonding was dissociated and diffusion through HfO2 occurred. The diffusion of indium atoms from the InSb substrate into the HfO2 increased during PDA at 400 degrees C. Most of the diffused atoms reacted with oxygen in the overall HfO2 layer, which degraded the capacitance equivalent thickness (CET). However, since a 1-nm-thick Al2O3 passivation layer on the InSb substrate effectively reduced the diffusion of indium atoms, we could significantly improve the thermal stability of the capacitor. In addition, we could dramatically reduce the gate leakage current by the Al2O3 passivation layer. Even if the border traps measured by C-V data were slightly larger than those of the as-grown sample without the passivation layer, the interface trap density was reduced by the Al2O3 passivation layer. As a result, the passivation layer effectively improved the thermal stability of the capacitor and reduced the interface trap density, compared with the sample without the passivation layer. English NATURE PUBLISHING GROUP OXIDE INTERFACE EVOLUTION CHARGE FILMS GAAS INP Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition Article 10.1038/s41598-017-09623-1 1 SCIENTIFIC REPORTS, v.7 SCIENTIFIC REPORTS 7 scie scopus 000410297900051 2-s2.0-85029332592 Multidisciplinary Sciences Science & Technology - Other Topics Article OXIDE INTERFACE EVOLUTION CHARGE FILMS GAAS INP HfO2 Al2O3 InSb High-k