Jeon, Kun-Rok Min, Byoung-Chul Park, Seoung-Young 2024-01-20T00:33:45Z 2024-01-20T00:33:45Z 2021-09-05 2017-09 0021-4922 https://pubs.kist.re.kr/handle/201004/122336 Electrical spin accumulation that was robust against changes in temperature and bias voltage was achieved in epitaxial Co70Fe30/MgO tunnel contacts to p-type Ge, with negligible Schottky barrier formation. Hanle and inverted Hanle effects, which are characteristic features of non-equilibrium spin accumulation in the tunnel contacts, were clearly observed up to room temperature for both hole spin injection and extraction. Notably, the obtained spin signal showed weak temperature dependence even at a low bias voltage, and symmetric behavior with respect to bias polarity, which are inconsistent with spin-polarized tunneling via localized states in the contact. (c) 2017 The Japan Society of Applied Physics English IOP PUBLISHING LTD Weak temperature and bias dependence of spin accumulation in epitaxial Co70Fe30/MgO tunnel contacts to p-type Ge Article 10.7567/JJAP.56.090303 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.56, no.9 JAPANESE JOURNAL OF APPLIED PHYSICS 56 9 scie scopus 000425245500001 2-s2.0-85031280814 Physics, Applied Physics Article SPINTRONICS SILICON FERROMAGNET