Sung, Nark-Eon Lee, Han-Koo Chae, Keun Hwa Singh, Jitendra Pal Lee, Ik-Jae 2024-01-20T01:00:15Z 2024-01-20T01:00:15Z 2021-09-05 2017-08-28 0021-8979 https://pubs.kist.re.kr/handle/201004/122394 Amorphous ZnO-SnO2 (a-ZTO) films were deposited on quartz substrates at working pressures of 5 <= P-W <= 12 mTorr using radio frequency sputtering. PW affected the occurrence of oxygen deficiencies in the films. X-ray photoemission spectroscopy, near edge X-ray absorption fine structure (NEXAFS), and ultraviolet photoelectron spectroscopy-based spectroscopy analyses showed that oxygen vacancies (OVs) influence the evolution of the optical and electrical properties of a-ZTO films. NEXAFS reflects the onset of OVs. Low P-W contributes to the evolution of a chemical structure with numerous OVs. This result can be applied to improve the electro-optical properties of a-ZTO films. As P-W decreased, the carrier concentration increased, carrier mobility increased, and film resistivity decreased. Average optical transmittance in the visible region was >90%, and increased as P-W decreased. Published by AIP Publishing. English AMER INST PHYSICS PULSED-LASER DEPOSITION SENSITIZED SOLAR-CELLS ZNO THIN-FILMS OPTICAL-PROPERTIES DOPED ZNO STANNATE SUBSTRATE ZN2SNO4 PHOTOLUMINESCENCE TEMPERATURE Correlation of oxygen vacancies to various properties of amorphous zinc tin oxide films Article 10.1063/1.5000138 1 JOURNAL OF APPLIED PHYSICS, v.122, no.8 JOURNAL OF APPLIED PHYSICS 122 8 scie scopus 000409117200046 2-s2.0-85028527266 Physics, Applied Physics Article PULSED-LASER DEPOSITION SENSITIZED SOLAR-CELLS ZNO THIN-FILMS OPTICAL-PROPERTIES DOPED ZNO STANNATE SUBSTRATE ZN2SNO4 PHOTOLUMINESCENCE TEMPERATURE Amorphous ZnO Oxygen vacancies X-ray photoemission spectroscopy NEXAFS ultraviolet photoelectron spectroscopy