Lee, Woo Chul Cho, Cheol Jin Kim, Sangtae Larsen, Eric S. Yum, Jung Hwan Bielawski, Christopher W. Hwang, Cheol Seong Kim, Seong Keun 2024-01-20T01:00:29Z 2024-01-20T01:00:29Z 2021-09-04 2017-08-17 1932-7447 https://pubs.kist.re.kr/handle/201004/122406 Growth characteristics and properties of BeO films grown by atomic layer deposition (ALD) are investigated. ALD chemistries between dimethylberyllium and two different oxygen sources, H2O and O-3, are governed by different reaction mechanisms, resulting in different film properties. At growth temperatures ranging from 150 to 300 degrees C, the properties of the BeO films grown using H2O are temperature-independent. In contrast, the BeO films grown using O-3 at low temperatures (<200 degrees C) show high concentrations of carbon and hydrogen, possibly owing to the incomplete removal of the ligands of the precursor, leading to a low film density. This correlates with the evolution of the rough surface and the microstructure composed of few nanometer-sized grains. The low-quality BeO films grown using O-3 at low temperatures (<200 degrees C) show a decreased band gap (E-g: 7.77.9 eV) and dielectric constant (epsilon(r): 5.66.7). Above 250 degrees C, these properties recovered to the levels (E-g similar to 9.4 eV and epsilon(r) similar to 8.1) of the BeO films grown using H2O, which show high values of E-g similar to 9.19.4 eV and epsilon(r) similar to 8. Collectively, these findings demonstrate that the O-3-ALD process requires relatively more thermal energy than H2O-ALD does, to produce high-quality BeO films. English American Chemical Society ALUMINUM-OXIDE OZONE TRIMETHYLALUMINUM Growth and Characterization of BeO Thin Films Grown by Atomic Layer Deposition Using H2O and O-3 as Oxygen Sources Article 10.1021/acs.jpcc.7b05240 1 The Journal of Physical Chemistry C, v.121, no.32, pp.17498 - 17504 The Journal of Physical Chemistry C 121 32 17498 17504 scie scopus 000408179500054 2-s2.0-85027699004 Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Chemistry Science & Technology - Other Topics Materials Science Article ALUMINUM-OXIDE OZONE TRIMETHYLALUMINUM BeO ALD dielectric