Lim, June Yeong Pezeshki, Atiye Oh, Sehoon Kim, Jin Sung Lee, Young Tack Yu, Sanghyuck Hwang, Do Kyung Lee, Gwan-Hyoung Choi, Hyoung Joon Im, Seongil 2024-01-20T01:00:42Z 2024-01-20T01:00:42Z 2021-09-04 2017-08 0935-9648 https://pubs.kist.re.kr/handle/201004/122419 Recently, α-MoTe2, a 2D transition-metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D α-MoTe2 a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin α-MoTe2 appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge-carrier polarity of MoTe2, functional devices such as p–n junction or complementary metal–oxide–semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p–n junction diode in a single α-MoTe2 nanosheet by a straightforward selective doping technique. In a single α-MoTe2 flake, an initially p-doped channel is selectively converted to an n-doped region with high electron mobility of 18 cm2 V−1 s−1 by atomic-layer-deposition-induced H-doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of α-MoTe2 for future electronic devices based on 2D semiconducting materials. English WILEY-V C H VERLAG GMBH Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping Article 10.1002/adma.201701798 1 ADVANCED MATERIALS, v.29, no.30 ADVANCED MATERIALS 29 30 N scie scopus 000407048800032 2-s2.0-85020197087 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article COMPLEMENTARY INVERTERS BAND-GAP TRANSISTORS PERFORMANCE LOGIC NANOSHEET CIRCUITS SEMICONDUCTOR BEHAVIOR CHANNEL atomic-layer-deposition-induced doping homogeneous complementary inverters p？n junction diodes α-MoTe2 2D semiconductors