Park, Tae-Eon Min, Byoung-Chul Park, Hee Gyum Lee, Jaejun Jo, Moon-Ho Jang, Chaun Koo, Hyun Cheol Choi, Heon-Jin Chang, Joonyeon 2024-01-20T01:01:59Z 2024-01-20T01:01:59Z 2021-09-04 2017-08 0003-6951 https://pubs.kist.re.kr/handle/201004/122490 We examined electrical spin transport in cylindrical silicon nanowires (Si NWs) using the lateral nonlocal spin-valve (NLSV) geometry with CoFeB/MgO contacts. The use of a thin MgO layer as the tunnel barrier in the NLSV devices provided an optimum resistance-area product for spin transport measurements in the Si NWs. A robust NLSV spin signal of over 3.95 k Omega and clear minor loops were observed at 1.8 K in the Si NWs heavily doped with phosphorous. Furthermore, the NLSV magnetoresistance was strongly influenced by the local magnetizations resulting from the ferromagnetic (FM) electrodes being attached to the cylindrically shaped Si NW, with these magnetizations differing from those of bulk ferromagnets. These local micro-magnetic configurations of the FM electrodes led to intriguing NLSV spin signals associated with the Hanle effect. Our study of spin transport in the heavily doped Si NWs provides a sound basis for developing applications of nanoscale semiconductor spintronic devices. Published by AIP Publishing. English AMER INST PHYSICS Electrical spin transport in cylindrical silicon nanowires with CoFeB/MgO contacts Article 10.1063/1.4998587 1 APPLIED PHYSICS LETTERS, v.111, no.6 APPLIED PHYSICS LETTERS 111 6 scie scopus 000407696500025 2-s2.0-85027268636 Physics, Applied Physics Article SEMICONDUCTOR NANOWIRES ROOM-TEMPERATURE TUNNEL BARRIERS INJECTION ACCUMULATION PERFORMANCE PRECESSION CHALLENGES DEVICES CHARGE spin injection spin accumulation Silicon nanowire CoFeB/Mgo contact Hanle effect nonlocal spin valve measurement