Kim, Hosung Ahn, Seung-Yeop Kim, Sanghyeon Ryu, Geunhwan Kyhm, Ji Hoon Lee, Kyung Woon Park, Jung Ho Choi, Won Jun 2024-01-20T01:02:22Z 2024-01-20T01:02:22Z 2021-09-04 2017-07-24 1094-4087 https://pubs.kist.re.kr/handle/201004/122509 We report the fabrication of quantum dot infrared photodetectors (QDIPs) on silicon (Si) substrates by means of metal wafer bonding and an epitaxial lift-off process. According to the photoluminescence (PL) and x-ray diffraction measurements, the QDIP layer was transferred onto the Si substrate without degradation of the crystal quality or residual strain. In addition, from the PL results, we found that an optical cavity was formed because Pt/Au of the bonding material was served as the back mirror and the facet of the GaAs/air was served as the front mirror. The device performance capabilities were directly compared and peak responsivity was enhanced by nearly twofold from 0.038 A/W to 0.067 A/W. (C) 2017 Optical Society of America English OPTICAL SOC AMER RESPONSIVITY InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off Article 10.1364/OE.25.017562 1 OPTICS EXPRESS, v.25, no.15, pp.17562 - 17570 OPTICS EXPRESS 25 15 17562 17570 scie scopus 000408584400061 2-s2.0-85025469694 Optics Optics Article RESPONSIVITY