Chee, Sang-Soo Oh, Chohee Son, Myungwoo Son, Gi-Cheol Jang, Hanbyeol Yoo, Tae Jin Lee, Seungmin Lee, Wonki Hwang, Jun Yeon Choi, Hyunyong Lee, Byoung Hun Ham, Moon-Ho 2024-01-20T01:02:24Z 2024-01-20T01:02:24Z 2021-09-05 2017-07-21 2040-3364 https://pubs.kist.re.kr/handle/201004/122511 Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS2 and MoS2 via hydrazine doping and sulfur annealing. Hydrazine treatment of WS2 improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS2 and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS2 is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS2, which may enable the fabrication of twodimensional electronic and optoelectronic devices with tunable properties and improved performance. English ROYAL SOC CHEMISTRY MOLYBDENUM-DISULFIDE ELECTRICAL-PROPERTIES MONOLAYER MOS2 TRANSISTORS DICHALCOGENIDES REDUCTION GRAPHENE DRIVEN DEFECT Sulfur vacancy-induced reversible doping of transition metal disulfidesvia hydrazine treatment Article 10.1039/c7nr01883e 1 NANOSCALE, v.9, no.27, pp.9333 - 9339 NANOSCALE 9 27 9333 9339 scie scopus 000405387100010 2-s2.0-85024095577 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article MOLYBDENUM-DISULFIDE ELECTRICAL-PROPERTIES MONOLAYER MOS2 TRANSISTORS DICHALCOGENIDES REDUCTION GRAPHENE DRIVEN DEFECT graphene optoelectronics