Cho, Byeong-Gwan Kim, Dong-Ok Kim, Jae-Young Chung, Jae-Ho Lee, Sanghoon Choi, Yongseong Choi, Jun Woo Lee, Dong Ryeol Lee, Ki Bong 2024-01-20T01:03:45Z 2024-01-20T01:03:45Z 2021-09-05 2017-07 0374-4884 https://pubs.kist.re.kr/handle/201004/122585 The depth-resolved magnetic configuration of a Ga0.97Mn0.03As/GaAs:Be multilayer with an antiferromagnetic interlayer exchange coupling was investigated using surface-sensitive soft x-ray resonant magnetic reflectivity (XRMR). We observed intriguing opposite increments in the XRMR intensities at the half-Bragg peak position between two different remanent states with opposite field sweep directions. A quantitative analysis shows that these opposite intensity increments result from two different anti-parallel spin configurations in such a way that the magnetization of top-most magnetic layer is pinned along the saturation magnetization direction before the remanent state. This surface pinning effect is important for understanding spin-dependent transport in semiconducting magnetic multilayers. English KOREAN PHYSICAL SOC X-RAY FERROMAGNETIC SEMICONDUCTORS REFLECTION SCATTERING GMR Surface Pinning Effect of an Antiferromagnetic Interlayer Exchange Coupling in (Ga1-xMnxAs/GaAs: Be)(10) Multilayer Article 10.3938/jkps.71.121 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.71, no.2, pp.121 - 125 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 71 2 121 125 scie scopus kci ART002245988 000406119500010 2-s2.0-85025171261 Physics, Multidisciplinary Physics Article X-RAY FERROMAGNETIC SEMICONDUCTORS REFLECTION SCATTERING GMR Dilute magnetic semiconductors Magnetic multilayer Interlayer exchange coupling X-ray resonant magnetic reflectivity