Cho, Yoonho Parmar, Narendra S. Nahm, Sahn Choi, Ji-Won 2024-01-20T01:04:25Z 2024-01-20T01:04:25Z 2021-09-05 2017-06-15 0272-8842 https://pubs.kist.re.kr/handle/201004/122619 In the quest of promising Indium free amorphous transparent conducting oxide (TCO), Zn-doped SnO2/Ag/Zn-doped SnO2 (OMO) multilayer films were prepared on flexible polyethylene terephthalate (PET) substrates by RF sputtering at room temperature (RT). Growth parameters were optimized by varying sputtering power and working pressure, to have high electrical conductivity and optical transmittance. Optimization of the thickness of each layer was done by Essential Macleod Program (EMP) simulation to get the higher transmission through OMO multilayer. The sheet resistance and transmittance of 3 at% Zn-doped SnO2 thin film (30 nm) were 2.23 k Omega/square, (rho similar to 8.92x10(-3) Omega.cm) and 81.3% (at lambda similar to 550 nm), respectively. By using optimized thicknesses of Zn-doped SnO2 (30 nm) and Ag (12 nm) and optimized growth condition Zn-doped SnO2/Ag/Zn-doped SnO2 multilayer thin films were deposited. The low sheet resistance of 7.2, Omega/square and high optical transmittance of 85.1% in the 550 nm wavelength region was achieved with 72 nm multilayer film. English ELSEVIER SCI LTD ROOM-TEMPERATURE FILMS PLASMA ANODE SNO2 GAS ITO Essential Macleod Program (EMP) simulated fabrication of high quality Zn:SnO2/Ag/Zn:SnO2 multilayer transparent conducting electrode on flexible substrates Article 10.1016/j.ceramint.2017.03.010 1 CERAMICS INTERNATIONAL, v.43, no.9, pp.7216 - 7221 CERAMICS INTERNATIONAL 43 9 7216 7221 scie scopus 000401401800077 2-s2.0-85014450049 Materials Science, Ceramics Materials Science Article ROOM-TEMPERATURE FILMS PLASMA ANODE SNO2 GAS ITO TCO OMO multilayer SnO2 Zn-doping Optical and electrical properties