Lee, Jaehyun Kim, Seungchul Shin, Mincheol 2024-01-20T01:30:21Z 2024-01-20T01:30:21Z 2021-09-05 2017-06-05 0003-6951 https://pubs.kist.re.kr/handle/201004/122641 In this work, we have performed the first-principles calculations to investigate the Schottky barrier height (SBH) of various nanostructured silicide-silicon junctions. As for the silicides, PtSi, NiSi, TiSi2, and YSi2 have been used. We find that E-FiF = E-Fi -E-F, where E-Fi and E-F are the intrinsic Fermi level of the semiconductor part and the Fermi level of the junction, respectively, is unchanged by nanostructuring. From this finding, we suggest a model, a symmetric increase of the SBH (SI) model, to properly predict SBHs of nanostructured silicide-silicon junctions. We also suggest two measurable quantities for the experimental validation of our model. The effect of our SI model applied to nanostructures such as nanowires and ultra-thin-bodies is compared with that of the widely used previous SBH model. Published by AIP Publishing. English AMER INST PHYSICS ELECTRONIC-STRUCTURE THIN-BODY TRANSISTORS INTERFACES SI PERFORMANCE CONTACTS SI(100) MOSFETS SYSTEMS A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Article 10.1063/1.4985013 1 APPLIED PHYSICS LETTERS, v.110, no.23 APPLIED PHYSICS LETTERS 110 23 scie scopus 000403347700036 2-s2.0-85020405022 Physics, Applied Physics Article ELECTRONIC-STRUCTURE THIN-BODY TRANSISTORS INTERFACES SI PERFORMANCE CONTACTS SI(100) MOSFETS SYSTEMS Schottky Barrier Nanostructure Density Functional Theory Simulation Band gap SBH model