Lee, Sung Hyuk Kim, Se Yun Kim, Seung Min Jeong, Jae Im Kim, Suk Jun 2024-01-20T01:32:00Z 2024-01-20T01:32:00Z 2021-09-01 2017-05-15 0925-8388 https://pubs.kist.re.kr/handle/201004/122732 Transparent conductive NiTe2 electrodes have been fabricated via magnetron sputtering followed by chemical exfoliation. The freshly deposited NiTe2 thin films with thicknesses of 9 nm exhibited an electrical resistivity of 82 mu Omega cm and transparency of 53%, which were further increased by chemical exfoliation up to 289)162 mu Omega and 61% (70% at a wavelength of 285 nm), respectively. The thin films obtained by sputtering an intermetallic NiTe2 target were characterized by lower electrical resistivity as compared to that of the films fabricated by co-sputtering of Ni and Te targets, which could be attributed to the larger number of grains with the out-of-plane c-axis orientation. (C) 2017 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA TRANSITION-METAL DICHALCOGENIDES THIN-FILMS EPITAXIAL-GROWTH GRAPHENE MOS2 CONDUCTIVITY DEPOSITION EFFICIENCY COMPOSITE NETWORKS Fabrication of transparent NiTe2 electrodes via magnetron sputtering combined with chemical exfoliation Article 10.1016/j.jallcom.2017.02.112 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.704, pp.607 - 613 JOURNAL OF ALLOYS AND COMPOUNDS 704 607 613 scie scopus 000396950900077 2-s2.0-85013046195 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article TRANSITION-METAL DICHALCOGENIDES THIN-FILMS EPITAXIAL-GROWTH GRAPHENE MOS2 CONDUCTIVITY DEPOSITION EFFICIENCY COMPOSITE NETWORKS Transparent electrode Transition metal dichalcogenide Two-dimensional materials NiTe2 Chemical exfoliation Sputtering