Park, Youn Ho Choi, Jun Woo Kim, Hyung-jun Chang, Joonyeon Han, Suk Hee Choi, Heon-Jin Koo, Hyun Cheol 2024-01-20T01:33:58Z 2024-01-20T01:33:58Z 2021-09-01 2017-04-20 2045-2322 https://pubs.kist.re.kr/handle/201004/122837 In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n-and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n-or p-channel transistor. English NATURE PUBLISHING GROUP ELECTRICAL DETECTION LOGIC DEVICE PRECESSION LAYERS Complementary spin transistor using a quantum well channel Article 10.1038/srep46671 1 SCIENTIFIC REPORTS, v.7 SCIENTIFIC REPORTS 7 scie scopus 000399747200001 2-s2.0-85038961090 Multidisciplinary Sciences Science & Technology - Other Topics Article ELECTRICAL DETECTION LOGIC DEVICE PRECESSION LAYERS Complementary spin transistor Quantum well Spin-orbit coupling Exchange bias