Kim, SangHyeon Geum, Dae-Myeong Park, Min-Su Kim, Ho-Sung Song, Jin Dong Choi, Won Jun 2024-01-20T01:34:16Z 2024-01-20T01:34:16Z 2021-09-01 2017-04-10 0003-6951 https://pubs.kist.re.kr/handle/201004/122852 We report on fabrication and characterization of high-quality 32 x 32 GaAs photodetector (PD) arrays on Si substrates fabricated by wafer bonding and epitaxial lift-off (ELO) techniques. Fabricated GaAs PD arrays showed good crystal quality on Si substrates with Raman spectra and X-ray diffraction measurement. Also, pitch scaling gave us faster ELO process time as well as high-density PD arrays. Furthermore, we investigated electrical and optical characteristics of fabricated GaAs pin PD arrays on Si substrates. Especially, the components of dark current characteristics were also evaluated, because it is very important to explore further pitch scaling. Published by AIP Publishing. English AMER INST PHYSICS EPITAXIAL LIFT-OFF WELL INFRARED PHOTODETECTORS PHOTODIODE BANDWIDTH WAFER SUBSTRATE Fabrication of high-quality GaAs-based photodetector arrays on Si Article 10.1063/1.4980122 1 APPLIED PHYSICS LETTERS, v.110, no.15 APPLIED PHYSICS LETTERS 110 15 scie scopus 000399689400038 2-s2.0-85017595853 Physics, Applied Physics Article EPITAXIAL LIFT-OFF WELL INFRARED PHOTODETECTORS PHOTODIODE BANDWIDTH WAFER SUBSTRATE