Son, Hyun Woo Jeun, Minhong Choi, Jaewon Lee, Kwan Hyi 2024-01-20T01:34:41Z 2024-01-20T01:34:41Z 2021-09-05 2017-04 1176-9114 https://pubs.kist.re.kr/handle/201004/122873 An ion-sensitive field-effect transistor ( ISFET) biosensor is thought to be the center of the next era of health diagnosis. However, questions are raised about its functions and reliability in liquid samples. Consequently, real-life clinical applications are few in number. In this study, we report a strategy to minimize the sensing signal drift error during bioanalyte detection in an ISFET biosensor. A nanoscale SnO2 thin film is used as a gate oxide layer (GOL), and the surface of the GOL is chemically modified for improving bioanalyte-specific binding and for reducing undesirable ion reactions in sample solutions. The ISFET biosensor with surface-modified GOL shows significantly reduced sensing signal error compared with an ISFET with bare GOL in both diluted and undiluted phosphate buffered saline solutions. English DOVE MEDICAL PRESS LTD FIELD-EFFECT TRANSISTOR A strategy to minimize the sensing voltage drift error in a transistor biosensor with a nanoscale sensing gate Article 10.2147/IJN.S134441 1 INTERNATIONAL JOURNAL OF NANOMEDICINE, v.12, pp.2951 - 2956 INTERNATIONAL JOURNAL OF NANOMEDICINE 12 2951 2956 scie scopus 000399287500002 2-s2.0-85017646879 Nanoscience & Nanotechnology Pharmacology & Pharmacy Science & Technology - Other Topics Pharmacology & Pharmacy Article FIELD-EFFECT TRANSISTOR extended gate surface treatment biosensor SnO2 ISFET