Geum, Dae-Myeong Park, Min-Su Kim, SangHyeon Choi, Won Jun Kim, Chang Zoo Yoon, Euijoon 2024-01-20T02:00:20Z 2024-01-20T02:00:20Z 2021-09-01 2017-04 0374-4884 https://pubs.kist.re.kr/handle/201004/122885 We present the heterogeneous integration of GaAs a single-junction solar cell (SC) on copper (Cu) via electroplating and epitaxial lift-off. We characterized the layer quality and the residual strain of the transferred SC layer through X-ray diffraction measurements and Raman spectroscopy. These results indicated that the fabrication process of SCs was quite stable, providing a high-quality film with a relatively small residual compressive strain. The SC transferred on Cu showed a highenergy conversion efficiency of 19.6% at 1sun illumination. In addition, we obtained a peak energy conversion efficiency of 20.8% at 2.5 suns in a solar concentrator. English KOREAN PHYSICAL SOC EPITAXIAL LIFT-OFF WAFER EFFICIENCY Heterogeneously integrated high-performance GaAs single-junction solar cells on copper Article 10.3938/jkps.70.693 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.70, no.7, pp.693 - 698 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 70 7 693 698 scie scopus kci ART002215919 000399234300006 2-s2.0-85017290681 Physics, Multidisciplinary Physics Article EPITAXIAL LIFT-OFF WAFER EFFICIENCY III-V solar cell Epitaxial lift off Heterogeneous integration Cu electroplating