Cho, Il-Wook Ryu, Mee-Yi Song, Jin Dong 2024-01-20T02:00:35Z 2024-01-20T02:00:35Z 2021-09-01 2017-04 0374-4884 https://pubs.kist.re.kr/handle/201004/122900 The optical properties of InP/InGaP quantum structures (QSs) grown by using a migrationenhanced molecular beam epitaxy method have been investigated using temperature (T)-dependent photoluminescence (PL) and time-resolved PL. InP QSs were grown by varying the growth temperature from 440 A degrees C to 520 A degrees C. InP/InGaP QS samples grown at temperatures of 440 A degrees C - 480 A degrees C show typical characteristics of a QS, such as rapid bandgap shrinkage at high T and enhanced PL lifetime at low T while the sample grown at 520 A degrees C exhibits the properties of bulk InP. The growth temperature is found to determine the formation of the InP/InGaP QSs; thus, it significantly affects the structural and the optical properties of the InP/InGaP QSs. The best luminescence properties are demonstrated by the sample grown at 460 A degrees C, indicating an optimum growth temperature of 460 A degrees C. English KOREAN PHYSICAL SOC THERMAL ESCAPE DOTS TIME DEPENDENCE DYNAMICS SPECTRA Luminescence properties of InP/InGaP quantum structures grown by using a migration-enhanced epitaxy at different growth temperatures Article 10.3938/jkps.70.785 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.70, no.8, pp.785 - 790 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 70 8 785 790 scie scopus kci 000400459400007 2-s2.0-85018423180 Physics, Multidisciplinary Physics Article THERMAL ESCAPE DOTS TIME DEPENDENCE DYNAMICS SPECTRA InP Quantum structure Photoluminescence Time-resolved photoluminescence